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| SMD Type Power High Performance Transistor FCX589 Features PNP silicon planar medium. Transistors SOT-89 +0.1 4.50-0.1 +0.1 1.80-0.1 +0.1 1.50-0.1 Unit: mm +0.1 2.50-0.1 +0.1 0.48-0.1 +0.1 0.53-0.1 +0.1 4.00-0.1 +0.1 0.80-0.1 +0.1 0.44-0.1 +0.1 2.60-0.1 +0.1 3.00-0.1 +0.1 0.40-0.1 1. Base 2. Collector 3. Emiitter Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Peak pulse current Continuous collector current Base current Power dissipation Operating and storage temperature range Symbol VCBO VCEO VEBO IC ICM IB Ptot Tj,Tstg Rating -50 -30 -5 -1 -2 -200 1 -65 to +150 Unit V V V A A mA W www.kexin.com.cn 1 SMD Type FCX589 Electrical Characteristics Ta = 25 Parameter Breakdown Voltages Breakdown Voltages * Breakdown Voltages Collector-base cut-off current Collector -Emitter Cut-Off Current Emitter Cut-Off Current Collector-emitter saturation voltage * Base-emitter saturation voltage * Base-Emitter Turn-on Voltage * Symbol V(BR)CBO IC=-100iA V(BR)CEO IC=-10mA V(BR)EBO IE=-100iA ICBO ICES IEBO VCB=-30V VCE=-30V VEB=-4V Testconditons Transistors Min -50 -30 -5 Typ Max Unit V V V -100 -100 -100 -0.35 -0.65 -1.2 -1.1 100 100 80 40 100 15 300 nA nA nA V V V IC=-1A, IB=-100mA VCE(sat) IC=-2A, IB=-200mA VBE(sat) IC=-1A, IB=-100mA VBE(on) IC=-1A, VCE=-2V IC=-1mA, VCE=-2V* Static Forward Current Transfer Ratio hFE IC=-500mA, VCE=-2V* IC=-1A, VCE=-2V* IC=-2A, VCE=-2V* Transitional frequency Output capacitance * Pulse test: tp = 300 is; d 0.02. fT Cobo IC=-100mA, VCE=-5V f=100MHz VCB=-10V, f=1MHz MHz pF Marking Marking P89 2 www.kexin.com.cn |
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